Low-temperature oxidation of Si in a microwave electron cyclotron resonance excited O<sub>2</sub> plasma.

MARTINET C; DEVINE R A B

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J-GLOBAL ID：200902119767909402 Reference number：96A0033797

Low-temperature oxidation of Si in a microwave electron cyclotron resonance excited O₂ plasma.

マイクロ波電子サイクロトロン共鳴励起O₂プラズマ中でのSiの低温酸化

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Author (2)： ,
Material：
Volume： 67 Issue： 23 Page： 3500-3502 Publication year： Dec. 04, 1995
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices , Semiconductor thin films

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Low-temperature oxidation of Si in a microwave electron cyclotron resonance excited O2 plasma.

Low-temperature oxidation of Si in a microwave electron cyclotron resonance excited O₂ plasma.