Art
J-GLOBAL ID：200902120032159190   Reference number：01A1027362

Co-implantation of Be+O and Mg+O into GaN.

GaN中へのBe+OとMg+Oの同時注入
Author (3)：
KENT D G

About KENT D G

(Univ. Florida, Florida)

About Univ. Florida, Florida

, 
OVERBERG M E

About OVERBERG M E

(Univ. Florida, Florida)

About Univ. Florida, Florida

, 
PEARTON S J

About PEARTON S J

(Univ. Florida, Florida)

About Univ. Florida, Florida


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 90  Issue： 8  Page： 3750-3753  Publication year： Oct. 15, 2001 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*ion implantation

About ion implantation

,...
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JST classification (1)：
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Irradiational changes semiconductors 
(BK16123E)

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Terms in the title (2)：
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GaN

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, 
注入

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