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J-GLOBAL ID：200902120079614871   Reference number：00A0594071

電総研/岩谷産業が高濃度オゾン発生装置を開発 理想的なゲート酸化膜の形成に成功

Author (1)：
KAWANA HIROYASU

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Material：
Semiconductor FPD World  (Semicond FPD World)

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Volume： 19  Issue： 5  Page： 129-131  Publication year： May. 2000 
JST Material Number： Y0509B  Document type： Article
Article type： 紹介的記事  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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*ozonation

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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
ozone generator

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
高濃度

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, 
オゾン発生装置

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, 
開発

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, 
ゲート酸化膜

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, 
成功

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