1.3-μm AlGaInAs-AlGaInAs Strained Multiple-Quantum-Well Lasers with a p-AlInAs Electron Stopper Layer.

TAKEMASA K; MUNAKATA T; KOBAYASHI M; WADA H; KAMIJOH T

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J-GLOBAL ID：200902120299446112 Reference number：98A0458353

1.3-μm AlGaInAs-AlGaInAs Strained Multiple-Quantum-Well Lasers with a p-AlInAs Electron Stopper Layer.

p-AlInAs電子ストッパ層を持つ1.3μm波長用の歪んだAlGaInAs-AlGaInAs多重量子井戸レーザ

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Author (5)： , , , ,
Material：
Volume： 10 Issue： 4 Page： 495-497 Publication year： Apr. 1998
JST Material Number： T0721A ISSN： 1041-1135 CODEN： IPTLEL Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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