Art

J-GLOBAL ID：200902120685073126   Reference number：00A0812199

Effects of ozone treatment of 4H-SiC(0001) surface.

4H-SiC(0001)表面のオゾン処理の効果

Author (9)： KOSUGI R (Electrotechnical Lab., Tsukuba, JPN) ,  ICHIMURA S (Electrotechnical Lab., Tsukuba, JPN) ,  KUROKAWA A (Electrotechnical Lab., Tsukuba, JPN) ,  KOIKE K (Electrotechnical Lab., Tsukuba, JPN) ,  FUKUDA K (Ultra-low Loss Power Device Technol. Res. Body, Tsukuba, JPN) ,  SUZUKI S (Ultra-low Loss Power Device Technol. Res. Body, Tsukuba, JPN) ,  OKUSHI H (Electrotechnical Lab., Tsukuba, JPN) ,  YOSHIDA S (Electrotechnical Lab., Tsukuba, JPN) ,  ARAI K (Electrotechnical Lab., Tsukuba, JPN)
Material： Applied Surface Science  (Appl Surf Sci)
Volume： 159/160  Page： 550-555  Publication year： Jun. 2000 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,...

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JST classification (2)： Techniques for samples  (BA02070O) ,  Surface structure of semiconductors  (BK15030A)

Terms in the title (2)： 4H-SiC ,  オゾン処理