Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy.

SARID D; YAO X; WORKMAN R K; PETERSON C; FALLAHI M

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J-GLOBAL ID：200902121391402659 Reference number：98A0616133

Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy.

走査型トンネル顕微鏡法によるGaAs/AlAsヘテロ構造における界面バンドベンディングの観測

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Author (5)： , , , ,
Material：
Volume： 3285 Page： 51-58 Publication year： 1998
JST Material Number： D0943A ISSN： 0277-786X CODEN： PSISDG Document type： Proceedings
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Electronic structure of crystalline semiconductors

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