1999 Annual Conference of Fundamentals and Materials Society, IEE Japan. Fundamental characteristics of the illminating light source using white light-emitting diodes based on InGaN semiconductors.

TAMURA TETSUSHI; SETOMOTO TATSUMI; TAGUCHI TSUNEMASA

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J-GLOBAL ID：200902121806449761 Reference number：00A0262537

1999 Annual Conference of Fundamentals and Materials Society, IEE Japan. Fundamental characteristics of the illminating light source using white light-emitting diodes based on InGaN semiconductors.

InGaN系半導体白色LEDを用いた照明用光源の基礎特性

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Volume： 120-A Issue： 2 Page： 244-249 Publication year： Feb. 01, 2000
JST Material Number： S0808A ISSN： 0385-4205 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Light emitting devices , Light sources,lighting apparatus

Reference (13)：

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NAKAMURA, S. Jpn.J.Appl.Phys. 1995, 34, L1332
FUMITOMO, H. Appl.Phys.Lett. 1997, 70, 2664
日亜化学が白色LEDのサンプル出荷を開始. 日経エレクトロニクス. 1996, 671, 15
田口. 第59回応用物理学会学術講演会

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