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J-GLOBAL ID：200902121879748163   Reference number：94A0958989

4H-SiC MESFET with 2.8W/mm Power Density at 1.8GHz.

1.8GHzで2.8W/mmの電力密度を有する4H-SiCMESFET
Author (4)：
WEITZEL C E

About WEITZEL C E

(Motorola, Inc., AZ, USA)

About Motorola, Inc., AZ, USA

, 
PALMOUR J W

About PALMOUR J W

(Cree Research, NC, USA)

About Cree Research, NC, USA

, 
CARTER C H JR

About CARTER C H JR

(Cree Research, NC, USA)

About Cree Research, NC, USA

, 
NORDQUIST K J

About NORDQUIST K J

(Motorola, Inc., AZ, USA)

About Motorola, Inc., AZ, USA


Material：
IEEE Electron Device Letters  (IEEE Electron Device Lett)

About IEEE Electron Device Letters


Volume： 15  Issue： 10  Page： 406-408  Publication year： Oct. 1994 
JST Material Number： B0344B  ISSN： 0741-3106  CODEN： EDLEDZ  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MESFET

About MESFET

,...
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JST classification (1)：
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Transistors 
(NC03070N)

About Transistors

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電力密度

About 電力密度


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