Impact of strain relaxation of AlmGa1-mN layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched AlmGa1-mN/GaN HEMTs.

RASHMI; KRANTI A; HALDAR S; GUPTA R S

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J-GLOBAL ID：200902122842338077 Reference number：02A0266356

Impact of strain relaxation of Al_mGa_1-mN layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched Al_mGa_1-mN/GaN HEMTs.

格子不整合Al_mGa_1-mN/GaN HEMTの2-DEGシート電荷密度および電流電圧特性に及ぼすAl_mGa_1-mN層の応力緩和の影響

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Material：
Volume： 33 Issue： 3 Page： 205-212 Publication year： Mar. 2002
JST Material Number： A0186A ISSN： 0026-2692 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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