Art
J-GLOBAL ID：200902123296322020
Reference number：01A0813837
High pressure growth of bulk GaN from solutions in gallium.
液体Ga中における高圧窒素溶液からのバルクのGaN結晶成長
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=01A0813837©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0813837&from=J-GLOBAL&jstjournalNo=B0914B") }}
Author (1)：
Material：
Volume：
13
Issue：
32
Page：
6875-6892
Publication year：
Aug. 13, 2001
JST Material Number：
B0914B
ISSN：
0953-8984
CODEN：
JCOMEL
Document type：
Article
Article type：
原著論文
Country of issue：
United Kingdom (GBR)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1)：
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors
Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
,
,
Return to Previous Page
