Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin-film transistors.

DIMITRIADIS C A; STOEMENOS J; COXON P A; FRILIGKOS S; ANTONOPOULOS J; ECONOMOU N A

Art

J-GLOBAL ID：200902123860743503 Reference number：93A0653722

Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin-film transistors.

低圧化学蒸着多結晶シリコン薄膜の微結晶成長に及ぼす圧力の効果と薄膜トランジスタにおける高い垂直電界下の有効電子移動度

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Author (6)： , , , , ,
Material：
Volume： 73 Issue： 12 Page： 8402-8411 Publication year： Jun. 15, 1993
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Transistors

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