Layer splitting process in hydrogen-implanted Si,Ge,SiC, and diamond substrates.

TONG Q-Y; GUTJAHR K; HOPFE S; GOESELE U; LEE T-H

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J-GLOBAL ID：200902123904928379 Reference number：97A0358962

Layer splitting process in hydrogen-implanted Si,Ge,SiC, and diamond substrates.

水素注入Si,Ge,SiC及びダイヤモンド基板の層分離過程

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Author (5)： , , , ,
Material：
Volume： 70 Issue： 11 Page： 1390-1392 Publication year： Mar. 17, 1997
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices

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