Art

J-GLOBAL ID：200902123911713574   Reference number：95A0152212

A Room Temperature 0.1μm CMOS on SOI.

SOI上の室温0.1μmCMOS

Author (9)： SHAHIDI G G (IBM Semiconductor Research and Development Center, NY, USA) ,  ANDERSON C A (IBM Semiconductor Research and Development Center, NY, USA) ,  CHAPPELL B A (IBM Semiconductor Research and Development Center, NY, USA) ,  CHAPPELL T I (IBM Semiconductor Research and Development Center, NY, USA) ,  COMFORT J H (IBM Semiconductor Research and Development Center, NY, USA) ,  DAVARI B (IBM Semiconductor Research and Development Center, NY, USA) ,  DENNARD R H (IBM Semiconductor Research and Development Center, NY, USA) ,  FRANCH R L (IBM Semiconductor Research and Development Center, NY, USA) ,  WARNOCK J D (IBM Semiconductor Research and Development Center, NY, USA)
Material： IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)
Volume： 41  Issue： 12  Page： 2405-2412  Publication year： Dec. 1994 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： SOI structure ,...

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JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Terms in the title (2)： SOI ,  室温