Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study.

TAKAMURA Y; VAILIONIS A; MARSHALL A F; GRIFFIN P B; PLUMMER J D

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J-GLOBAL ID：200902124204087493 Reference number：02A0901801

Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study.

高濃度SbドープSi(001)におけるドーパントの脱活性化高分解能X線回折と透過電子顕微鏡観察

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Author (5)： , , , ,
Material：
Volume： 92 Issue： 9 Page： 5503-5507 Publication year： Nov. 01, 2002
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Lattice defects in semiconductors

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