Art
J-GLOBAL ID：200902124499156556   Reference number：96A0891500

Status of silicon carbide(SiC) as a wide-bandgap semiconductor for high-temperature applications: a review.

高温応用広バンドギャップ半導体としての炭化けい素(SiC)の地位:レビュー
Author (2)：
CASADY J B

About CASADY J B

(Auburn Univ., AL, USA)

About Auburn Univ., AL, USA

, 
JOHNSON R W

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(Auburn Univ., AL, USA)

About Auburn Univ., AL, USA


Material：
Solid-State Electronics  (Solid-State Electron)

About Solid-State Electronics


Volume： 39  Issue： 10  Page： 1409-1422  Publication year： Oct. 1996 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 文献レビュー  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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energy gap

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forbidden band

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Materials of solid-state devices 
(NC03020K)

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応用

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, 
バンドギャップ

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, 
炭化けい素

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, 
SiC

About SiC

, 
レビュー

About レビュー


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