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J-GLOBAL ID:200902124834047350   Reference number:02A0729178

Characterizatin of homoepitaxial p-type ZnO grown by molecular beam epitaxy.

分子ビームエピタクシーで成長させたホモエピタキシャルp型ZnOの特性評価
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Volume: 81  Issue: 10  Page: 1830-1832  Publication year: Sep. 02, 2002 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Electric conduction in crystalline semiconductors  ,  Luminescence of semiconductors 

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