Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructures.

SOUIFI A; BENYATTOU T; GUILLOT G; BREMOND G; DUTARTRE D; WARREN P

Art

J-GLOBAL ID：200902125319713726 Reference number：95A0907701

Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructures.

SiGe/Siヘテロ構造の光ルミネセンスへの急熱焼鈍の効果

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=95A0907701&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=95A0907701&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (6)： , , , , ,
Material：
Volume： 78 Issue： 6 Page： 4039-4045 Publication year： Sep. 15, 1995
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=95A0907701&from=J-GLOBAL&jstjournalNo=C0266A") }}

Luminescence of semiconductors , Excitons , Semiconductor thin films

, , , ,

Return to Previous Page