Preparation and Properties of Active Devices from Oxide Compounds.

ABE O; TAKETA Y

Art

J-GLOBAL ID：200902125694649245 Reference number：02A0126522

Preparation and Properties of Active Devices from Oxide Compounds.

酸化物を用いた機能素子の作製とその特性

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Material：
Volume： 5 Issue： 1 Page： 30-34 Publication year： Jan. 01, 2002
JST Material Number： S0579C ISSN： 1343-9677 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Other solid-state devices

Reference (10)：

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INABA, M. Infrared Sensing Properties of Positive Temperature Coefficient Thermistors with Large Temperature Coefficients of Resistivity. J. Materials Science. 1992, 27, 127-132
SAOTO, S. A New Dielectric Ceramic Material for Capacitors with High Specific Capacitance. Proc. IMC. 1988, 211-218
YOSHIDA, N. The Low Temparature Firable BaO-ZrO_2-B_2O_3 Ceramic Green Sheet System. Proc. IMC. 1988, 98-104
KANEUCHI, A. CaZrO_3-Based Dielectric Subsutrate with Cu Thick Film. Proc. IMC. 1992, 595-599

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