Saturated absorption spectroscopy of Xe using a GaAs semiconductor laser.

SUZUKI M; KATOH K; NISHIMIYA N

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J-GLOBAL ID：200902126617894926 Reference number：02A0734219

Saturated absorption spectroscopy of Xe using a GaAs semiconductor laser.

GaAs半導体レーザを用いたXeの飽和吸収分光法

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Material：
Volume： 58A Issue： 11 Page： 2519-2531 Publication year： Sep. 2002
JST Material Number： E0128B ISSN： 1386-1425 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Radio-frequency,microwave and infrared spectra , Experimental research on molecular structure and properties

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