Art
J-GLOBAL ID：200902127512678272   Reference number：99A0525575

Electrical activation kinetics for shallow boron implants in silicon.

ほう素を浅く注入したけい素における電気的活性化の速度論
Author (2)：
FIORY A T

About FIORY A T

(Bell Lab., New Jersey)

About Bell Lab., New Jersey

, 
BOURDELLE K K

About BOURDELLE K K

(Bell Lab., Florida)

About Bell Lab., Florida


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 74  Issue： 18  Page： 2658-2660  Publication year： May. 03, 1999 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*boron

About boron

,...
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

,  Diffusion in solids in general 
(BL06021L)

About Diffusion in solids in general

,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds 
(BM03083P)

About Semiconductor-semiconductor contacts without Gr.13-15 element compounds

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
ほう素

About ほう素

, 
注入

About 注入

, 
けい素

About けい素

, 
電気的活性

About 電気的活性

, 
速度論

About 速度論


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