Art

J-GLOBAL ID：200902127729805329   Reference number：00A0455985

The Study of the Origin of the Anomalously Large Thermoelectric Power of Si/Ge Superlattice Thin Film.

Si/Ge超格子薄膜の異常に大きい熱電能の起源の研究

Author (4)： UCHINO H (National Defense Acad., Yokosuka, JPN) ,  OKAMOTO Y (National Defense Acad., Yokosuka, JPN) ,  KAWAHARA T (National Defense Acad., Yokosuka, JPN) ,  MORIMOTO J (National Defense Acad., Yokosuka, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 39  Issue： 4A  Page： 1675-1677  Publication year： Apr. 15, 2000 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,...

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JST classification (2)： Electric conduction in crystalline semiconductors  (BM03043X) ,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds  (BM03083P)

Reference (16)：

• 1) B. C. Sales, D. Mandrus, B. C. Chakoumakos, V. Keepens and J. R. Thomson: Phys. Rev. B 56 (1997) 15081.
• 2) B. C. Sales, D. Mandrus and R. K. Williams: Science 272 (1996) 1325.
• 3) L. D. Hicks and M. S. Dresselhaus: Phys. Rev. B 47 (1993) 12727.
• 4) L. D. Hicks and M. S. Dresselhaus: Phys. Rev. B 47 (1993) 16631.
• 5) J. O. Sofo and G. D. Mahan: Appl. Phys. Lett. 65 (1994) 2690.

Terms in the title (7)： Si ,  Ge ,  超格子 ,  薄膜 ,  熱電能 ,  起源 ,  研究