Art
J-GLOBAL ID：200902127901615766   Reference number：98A0097691

High-mobility Si and Ge structures.

高移動度Si及びGe構造
Author (1)：
SCHAEFFLER F

About SCHAEFFLER F

(Univ. Linz, Linz, AUT)

About Univ. Linz, Linz, AUT


Material：
Semiconductor Science and Technology  (Semicond Sci Technol)

About Semiconductor Science and Technology


Volume： 12  Issue： 12  Page： 1515-1549  Publication year： Dec. 1997 
JST Material Number： E0503B  ISSN： 0268-1242  CODEN： SSTEET  Document type： Article
Article type： 文献レビュー  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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silicon

About silicon

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts without Gr.13-15 element compounds 
(BM03083P)

About Semiconductor-semiconductor contacts without Gr.13-15 element compounds

,  Transistors 
(NC03070N)

About Transistors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
高移動度

About 高移動度

, 
Si

About Si

, 
Ge

About Ge


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