Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; YAMADA T; MATSUSHITA T; SUGIMOTO Y; KIYOKU H

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J-GLOBAL ID：200902128997239790 Reference number：97A0358971

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours.

寿命が27hのInGaN多重量子井戸構造レーザダイオードの室温における連続波動作

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Material：
Volume： 70 Issue： 11 Page： 1417-1419 Publication year： Mar. 17, 1997
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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