Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal.

SPRUYTTE S G; COLDREN C W; HARRIS J S; WAMPLER W; KRISPIN P; PLOOG K; LARSON M C

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J-GLOBAL ID：200902129711168588 Reference number：01A0568275

Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal.

窒化物-ひ化物への窒素の導入アニール後の改善されたルミネセンス効率の起源

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Author (7)： , , , , , ,
Material：
Volume： 89 Issue： 8 Page： 4401-4406 Publication year： Apr. 15, 2001
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Lattice defects in semiconductors

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