Art
J-GLOBAL ID：200902130023222640   Reference number：00A0914719

Electronic Properties of the Si/SiO2 Interface from First Principles.

第1原理によるSi/SiO2界面の電子特性
Author (3)：
NEATON J B

About NEATON J B

(Cornell Univ., New York)

About Cornell Univ., New York

, 
MULLER D A

About MULLER D A

(Bell Lab., New Jersey)

About Bell Lab., New Jersey

, 
ASHCROFT N W

About ASHCROFT N W

(Cornell Univ., New York)

About Cornell Univ., New York


Material：
Physical Review Letters  (Phys Rev Lett)

About Physical Review Letters


Volume： 85  Issue： 6  Page： 1298-1301  Publication year： Aug. 07, 2000 
JST Material Number： H0070A  ISSN： 0031-9007  CODEN： PRLTAO  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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silicon

About silicon

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Electronic structure of surfaces 
(BM02080J)

About Electronic structure of surfaces

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
第1原理

About 第1原理

, 
Si

About Si

, 
SiO2

About SiO2

, 
界面

About 界面

, 
電子

About 電子


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