Art
J-GLOBAL ID：200902130425472375   Reference number：95A0723795

Process parameters for in situ growth of SiC whiskers in bulk porous carbon.

バルク多孔性炭素中のSiCホイスカのその場成長に関するプロセスパラメータ
Author (3)：
HUA C K

About HUA C K

(Central South Univ. Technol., Changsha, CHN)

About Central South Univ. Technol., Changsha, CHN

, 
DAN P

About DAN P

(Central South Univ. Technol., Changsha, CHN)

About Central South Univ. Technol., Changsha, CHN

, 
QIANG X Z

About QIANG X Z

(Northeastern Univ., Shenyang, CHN)

About Northeastern Univ., Shenyang, CHN


Material：
British Ceramic Transactions  (Br Ceram Trans)

About British Ceramic Transactions


Volume： 94  Issue： 3  Page： 118-122  Publication year： 1995 
JST Material Number： E0272A  ISSN： 0967-9782  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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silicon carbide

About silicon carbide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing of ceramics and ceramic whiteware 
(YC03020V)

About Manufacturing of ceramics and ceramic whiteware

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
バルク

About バルク

, 
多孔性炭素

About 多孔性炭素

, 
SiC

About SiC

, 
ホイスカ

About ホイスカ

, 
その場成長

About その場成長

, 
プロセスパラメータ

About プロセスパラメータ


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