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J-GLOBAL ID:200902131605279812   Reference number:95A0517494

Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy.

プラズマ促進MBE法によりGaおよびNに富む条件下で成長させたGaN薄膜の特性
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Material:
Volume: 77  Issue:Page: 4455-4458  Publication year: May. 01, 1995 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Category name(code) classified by JST.
Semiconductor thin films  ,  Metal-insulator-semiconductor structures 

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