Synthesis and ellipsometric characterization of insulating low permittivity SiO<sub>2</sub> layers by remote-PECVD using radio-frequency glow discharge.

DULTSEV F N; SOLOWJEV A P

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J-GLOBAL ID：200902131806718792 Reference number：02A0929644

Synthesis and ellipsometric characterization of insulating low permittivity SiO₂ layers by remote-PECVD using radio-frequency glow discharge.

高周波グロー放電を用いた遠隔PECVDによる絶縁性の低誘電率SiO₂層の合成と偏光解析法による評価

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Author (2)： ,
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Volume： 419 Issue： 1/2 Page： 27-32 Publication year： Nov. 01, 2002
JST Material Number： B0899A ISSN： 0040-6090 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Oxide thin films

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Synthesis and ellipsometric characterization of insulating low permittivity SiO2 layers by remote-PECVD using radio-frequency glow discharge.

Synthesis and ellipsometric characterization of insulating low permittivity SiO₂ layers by remote-PECVD using radio-frequency glow discharge.