Effect of substrate misorientation on the growth of Ga<sub>x</sub>In<sub>1-x</sub>P lateral quantum wells.

CHEN A C; MOY A M; CHOU L J; HSIEH K C; CHENG K Y

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J-GLOBAL ID：200902134797364795 Reference number：95A0518317

Effect of substrate misorientation on the growth of Ga_xIn_1-xP lateral quantum wells.

Ga_xI_1-xP横方向量子井戸の成長に対する基板誤配向の効果

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Volume： 66 Issue： 20 Page： 2694-2696 Publication year： May. 15, 1995
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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Effect of substrate misorientation on the growth of GaxIn1-xP lateral quantum wells.

Effect of substrate misorientation on the growth of Ga_xIn_1-xP lateral quantum wells.