Art
J-GLOBAL ID：200902135112883759   Reference number：98A0044231

Chemical polishing of bulk and epitaxial GaN.

バルク及びエピタキシャルGaNの化学研磨
Author (4)：
WEYHER J L

About WEYHER J L

(Fraunhofer-Inst. Angewandte Festkoerperphysik, Freiburg, DEU)

About Fraunhofer-Inst. Angewandte Festkoerperphysik, Freiburg, DEU

, 
MUELLER S

About MUELLER S

(Fraunhofer-Inst. Angewandte Festkoerperphysik, Freiburg, DEU)

About Fraunhofer-Inst. Angewandte Festkoerperphysik, Freiburg, DEU

, 
GRZEGORY I

About GRZEGORY I

(High Pressure Res. Center, Polish Acad. Sci., Warsaw, POL)

About High Pressure Res. Center, Polish Acad. Sci., Warsaw, POL

, 
POROWSKI S

About POROWSKI S

(High Pressure Res. Center, Polish Acad. Sci., Warsaw, POL)

About High Pressure Res. Center, Polish Acad. Sci., Warsaw, POL


Material：
Journal of Crystal Growth  (J Cryst Growth)

About Journal of Crystal Growth


Volume： 182  Issue： 1/2  Page： 17-22  Publication year： Dec. 1997 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium nitride

About gallium nitride

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Surface structure of semiconductors 
(BK15030A)

About Surface structure of semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
バルク

About バルク

, 
エピタキシャル

About エピタキシャル

, 
GaN

About GaN

, 
化学研磨

About 化学研磨


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