Ga<sub>x</sub>In<sub>1-x</sub>P multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering process.

CHEN A C; MOY A M; PEARAH P J; HSIEH K C; CHENG K Y

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J-GLOBAL ID：200902135309617120 Reference number：93A0363774

Ga_xIn_1-xP multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering process.

歪誘起横方向層秩序化過程によって製作したGa_xIn_1-xPの多重量子細線ヘテロ構造

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Author (5)： , , , ,
Material：
Volume： 62 Issue： 12 Page： 1359-1361 Publication year： Mar. 22, 1993
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Luminescence of semiconductors

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GaxIn1-xP multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering process.

Ga_xIn_1-xP multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering process.