Art
J-GLOBAL ID：200902135510422192   Reference number：02A0687153

GaN films deposited by planar magnetron sputtering.

プレーナマグネトロンスパッタリングにより堆積したGaN膜
Author (6)：
KIKUMA T

About KIKUMA T

(Univ. Tokushima, Tokushima, JPN)

About Univ. Tokushima, Tokushima, JPN

, 
TOMINAGA K

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(Univ. Tokushima, Tokushima, JPN)

About Univ. Tokushima, Tokushima, JPN

, 
FURUTANI K

About FURUTANI K

(Univ. Tokushima, Tokushima, JPN)

About Univ. Tokushima, Tokushima, JPN

, 
KUSAKA K

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(Univ. Tokushima, Tokushima, JPN)

About Univ. Tokushima, Tokushima, JPN

, 
HANABUSA T

About HANABUSA T

(Univ. Tokushima, Tokushima, JPN)

About Univ. Tokushima, Tokushima, JPN

, 
MUKAI T

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(Nichia Corp., Anan, JPN)

About Nichia Corp., Anan, JPN


Material：
Vacuum

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Volume： 66  Issue： 3/4  Page： 233-237  Publication year： Aug. 19, 2002 
JST Material Number： E0347A  ISSN： 0042-207X  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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*gallium nitride

About gallium nitride

,...
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JST classification (1)：
JST classification
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Semiconductor thin films 
(BK14040E)

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Terms in the title (2)：
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堆積

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, 
GaN

About GaN


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