A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11<span style=text-decoration:overline>2</span>0) face.

YANO H; HIRAO T; KIMOTO T; MATSUNAMI H

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J-GLOBAL ID：200902136402656655 Reference number：01A0310687

A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11<span style=text-decoration:overline>2</span>0) face.

(11-20)面上の4H-SiCの金属-酸化物-半導体の電界効果トランジスタについてチャネル移動度が大きく改良された原因

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Author (4)： , , ,
Material：
Volume： 78 Issue： 3 Page： 374-376 Publication year： Jan. 15, 2001
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

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