Defect Properties of CuInS<sub>2</sub> Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure.

MATSUSHITA H; MIHIRA T; TAKIZAWA T

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J-GLOBAL ID：200902136828591534 Reference number：01A0823367

Defect Properties of CuInS₂ Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure.

S蒸気圧を制御した水平Bridgman法により成長したCuInS₂単結晶の欠陥特性

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Volume： 40 Issue： 8 Page： 4789-4793 Publication year： Aug. 15, 2001
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Lattice defects in semiconductors , Electric conduction in crystalline semiconductors

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Defect Properties of CuInS2 Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure.

Defect Properties of CuInS₂ Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure.