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J-GLOBAL ID:200902136911837715   Reference number:96A0957900

Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching.

水素エッチングによる6H-SiC(0001)基板からの研磨で生じた損傷の除去
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Volume: 167  Issue: 1/2  Page: 391-395  Publication year: Sep. 1996 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 短報  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Surface structure of semiconductors 
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