Photo- and electro-luminescence studies of uncooled Arsenic rich In(As,Sb) strained layer superlattice light emitting diodes for the 4-12μm band.

TANG P J P; PULLIN M J; CHUNG S J; PHILLIPS C C; STRADLING R A; NORMAN A G; LI Y B; HART L

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J-GLOBAL ID：200902137981702201 Reference number：95A0708528

Photo- and electro-luminescence studies of uncooled Arsenic rich In(As,Sb) strained layer superlattice light emitting diodes for the 4-12μm band.

4~12μm波長領域での非冷却ひ素リッチIn(As,Sb)歪層超格子発光ダイオードの光ルミネセンスとエレクトロルミネセンス

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Author (8)： , , , , , , ,
Material：
Volume： 2397 Page： 389-398 Publication year： 1995
JST Material Number： D0943A ISSN： 0277-786X CODEN： PSISDG Document type： Proceedings
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Light emitting devices

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