Low-Threshold High-T<sub>o</sub> 1.3-μm InAs Quantum-Dot Lasers Due to P-type Modulation Doping of the Active Region.

SHCHEKIN O B; DEPPE D G

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J-GLOBAL ID：200902138646850502 Reference number：02A0795626

Low-Threshold High-T_o 1.3-μm InAs Quantum-Dot Lasers Due to P-type Modulation Doping of the Active Region.

能動領域のP型変調ドーピングによる低しきい値高T₀1.3μmInAs量子ドットレーザ

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Volume： 14 Issue： 9 Page： 1231-1233 Publication year： Sep. 2002
JST Material Number： T0721A ISSN： 1041-1135 CODEN： IPTLEL Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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Low-Threshold High-To 1.3-μm InAs Quantum-Dot Lasers Due to P-type Modulation Doping of the Active Region.

Low-Threshold High-T_o 1.3-μm InAs Quantum-Dot Lasers Due to P-type Modulation Doping of the Active Region.