Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films.

HEYING B; WU X H; KELLER S; LI Y; KAPOLNEK D; KELLER B P; DENBAARS S P; SPECK J S

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J-GLOBAL ID：200902139258984196 Reference number：96A0193367

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films.

GaNエピタキシャル膜のX線回折ピーク幅に対する貫通転位構造の役割

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Material：
Volume： 68 Issue： 5 Page： 643-645 Publication year： Jan. 29, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Lattice defects in semiconductors

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