Art
J-GLOBAL ID：200902139290615038   Reference number：99A0486108

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films.

Pendeo-エピタキシー 窒化ガリウム膜の横成長のための新アプローチ
Author (6)：
ZHELEVA T S

About ZHELEVA T S

, 
SMITH S A

About SMITH S A

, 
THOMSON D B

About THOMSON D B

, 
LINTHICUM K J

About LINTHICUM K J

, 
RAJAGOPAL P

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, 
DAVIS R F

About DAVIS R F


Material：
Journal of Electronic Materials  (J Electron Mater)

About Journal of Electronic Materials


Volume： 28  Issue： 4  Page： L5-L8  Publication year： Apr. 1999 
JST Material Number： D0277B  ISSN： 0361-5235  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*gallium nitride

About gallium nitride

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
MOVPE

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JST classification (2)：
JST classification
Category name(code) classified by JST.
Materials of solid-state devices 
(NC03020K)

About Materials of solid-state devices

,  Crystal growth of semiconductors 
(BK13040X)

About Crystal growth of semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
エピタキシー

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, 
窒化ガリウム

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, 
成長

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