Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s.

OBERHUBER R; ZANDLER G; VOGL P

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J-GLOBAL ID：200902139467106805 Reference number：99A0028399

Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s.

歪Si/SiGe MOSFETにおける2次元正孔のサブバンド構造と移動度

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Volume： 58 Issue： 15 Page： 9941-9948 Publication year： Oct. 15, 1998
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures

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