Effects of Wet Oxidation/Anneal on Interface Properties of Thermally Oxidized SiO<sub>2</sub>/SiC MOS System and MOSFET’s.

YANO H; KATAFUCHI F; KIMOTO T; MATSUNAMI H

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J-GLOBAL ID：200902139708333271 Reference number：99A0390429

Effects of Wet Oxidation/Anneal on Interface Properties of Thermally Oxidized SiO₂/SiC MOS System and MOSFET’s.

湿式酸化/アニールが熱酸化SiO₂/SiC MOS系の界面の性質およびMOSFETに及ぼす効果

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Volume： 46 Issue： 3 Page： 504-510 Publication year： Mar. 1999
JST Material Number： C0222A ISSN： 0018-9383 CODEN： IETDAI Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

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Effects of Wet Oxidation/Anneal on Interface Properties of Thermally Oxidized SiO2/SiC MOS System and MOSFET’s.

Effects of Wet Oxidation/Anneal on Interface Properties of Thermally Oxidized SiO₂/SiC MOS System and MOSFET’s.