Art
J-GLOBAL ID：200902140509131412   Reference number：97A0416538

Nanostructure patterns written in III-V semiconductors by an atomic force microscope.

III-V半導体における原子間力顕微鏡によるナノ構造パターン
Author (2)：
MAGNO R

About MAGNO R

(Naval Res. Lab., Washington, D.C.)

About Naval Res. Lab., Washington, D.C.

, 
BENNETT B R

About BENNETT B R

(Naval Res. Lab., Washington, D.C.)

About Naval Res. Lab., Washington, D.C.


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 70  Issue： 14  Page： 1855-1857  Publication year： Apr. 07, 1997 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
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gallium arsenide

About gallium arsenide

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Microscopy determination of structures 
(BK01040E)

About Microscopy determination of structures

,  Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
原子間力顕微鏡

About 原子間力顕微鏡

, 
ナノ構造

About ナノ構造


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