High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS<sub>2</sub>.

AROKIARAJ J; SOGA T; JIMBO T; UMENO M

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J-GLOBAL ID：200902141386512293 Reference number：00A0111697

High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS₂.

SeS₂を使うエピタキシャルリフトオフ技術によるSi上の高品質GaAs

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Material：
Volume： 75 Issue： 24 Page： 3826-3828 Publication year： Dec. 13, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Manufacturing technology of solid-state devices

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High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2.

High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS₂.