Art
J-GLOBAL ID：200902141905162947   Reference number：95A0818816

Ion implantation doping and isolation of GaN.

GaNのイオン注入ドーピングとアイソレーション
Author (5)：
PEARTON S J

About PEARTON S J

(Univ. Florida, Florida)

About Univ. Florida, Florida

, 
VARTULI C B

About VARTULI C B

(Univ. Florida, Florida)

About Univ. Florida, Florida

, 
ZOLPER J C

About ZOLPER J C

(Sandia National Lab., New Mexico)

About Sandia National Lab., New Mexico

, 
YUAN C

About YUAN C

(EMCORE Corp., New Jersey)

About EMCORE Corp., New Jersey

, 
STALL R A

About STALL R A

(EMCORE Corp., New Jersey)

About EMCORE Corp., New Jersey


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 67  Issue： 10  Page： 1435-1437  Publication year： Sep. 04, 1995 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
gallium nitride

About gallium nitride

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

,  Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
イオン注入

About イオン注入

, 
ドーピング

About ドーピング

, 
アイソレーション

About アイソレーション


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