Thermal stability and structural characteristics of HfO<sub>2</sub> films on Si (100) grown by atomic-layer deposition.

CHO M-H; ROH Y S; WHANG C N; JEONG K; NAHM S W; KO D-H; LEE J H; LEE N I; FUJIHARA K

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J-GLOBAL ID：200902142065073928 Reference number：02A0628233

Thermal stability and structural characteristics of HfO₂ films on Si (100) grown by atomic-layer deposition.

原子層蒸着法で成長させたSi(100)上のHfO₂の熱安定性と構造特性

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Author (9)： , , , , , , , ,
Material：
Volume： 81 Issue： 3 Page： 472-474 Publication year： Jul. 15, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films

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Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition.

Thermal stability and structural characteristics of HfO₂ films on Si (100) grown by atomic-layer deposition.