Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices.

VISPUTE R D; TALYANSKY V; CHOOPUN S; HE M; TANG X; HALPERN J B; LI Y X; ILIADIS A A; JONES K A

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J-GLOBAL ID：200902142155937050 Reference number：98A0750659

Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices.

GaN上のZnOのヘテロエピタクシーとその混成オプトエレクトロニクス素子作製に対する関連性

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Material：
Volume： 73 Issue： 3 Page： 348-350 Publication year： Jul. 20, 1998
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Luminescence of semiconductors

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