Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer.

DADGAR A; CHRISTEN J; RIEMANN T; RICHTER S; BLAESING J; DIEZ A; KROST A; ALAM A; HEUKEN M

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J-GLOBAL ID：200902142538605671 Reference number：01A0565056

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer.

Si(111)面上のInGaN/GaN多重量子井戸ダイオードからの明るい青色エレクトロルミネセンス AlGaN/GaN多重層の影響

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Material：
Volume： 78 Issue： 15 Page： 2211-2213 Publication year： Apr. 09, 2001
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Light emitting devices

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