Art
J-GLOBAL ID：200902143305007363   Reference number：97A0294410

Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure.

逆転In0.53Ga0.47As/In0.52Al0.48Asヘテロ構造におけるスピン-軌道相互作用のゲート制御
Author (4)：
NITTA J

About NITTA J

(NTT Basic Res. Lab., Kanagawa, JPN)

About NTT Basic Res. Lab., Kanagawa, JPN

, 
AKAZAKI T

About AKAZAKI T

(NTT Basic Res. Lab., Kanagawa, JPN)

About NTT Basic Res. Lab., Kanagawa, JPN

, 
TAKAYANAGI H

About TAKAYANAGI H

(NTT Basic Res. Lab., Kanagawa, JPN)

About NTT Basic Res. Lab., Kanagawa, JPN

, 
ENOKI T

About ENOKI T

(NTT System Electronics Lab., Kanagawa, JPN)

About NTT System Electronics Lab., Kanagawa, JPN


Material：
Physical Review Letters  (Phys Rev Lett)

About Physical Review Letters


Volume： 78  Issue： 7  Page： 1335-1338  Publication year： Feb. 17, 1997 
JST Material Number： H0070A  ISSN： 0031-9007  CODEN： PRLTAO  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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indium gallium arsenide

About indium gallium arsenide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts with Gr.13-15 element compounds 
(BM03082Y)

About Semiconductor-semiconductor contacts with Gr.13-15 element compounds

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
逆転

About 逆転

, 
ヘテロ構造

About ヘテロ構造

, 
スピン-軌道相互作用

About スピン-軌道相互作用

, 
ゲート制御

About ゲート制御


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