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J-GLOBAL ID:200902144714311097   Reference number:97A0508865

Quantum-Mechanical Modeling of Electron Tunneling Current from the Inversion Layer of Ultra-Thin-Oxide nMOSFET’s.

極薄ゲート酸化膜を持つn型MOSFETの反転層からの電子トンネル電流の量子力学的モデル化
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Volume: 18  Issue:Page: 209-211  Publication year: May. 1997 
JST Material Number: B0344B  ISSN: 0741-3106  CODEN: EDLEDZ  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors 

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