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J-GLOBAL ID：200902144739457592
Reference number：98A0950487
Ferroelectric Properties of SrRuO3/(Ba, Sr)TiO3/SrRuO3 Epitaxial Capacitor.
SrRuO3/(Ba,Sr)TiO3/SrRuO3エピタキシャルキャパシタの強誘電特性
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Author (6)：
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Material：
Volume：
37
Issue：
9B
Page：
5108-5111
Publication year：
Sep. 1998
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Ferroelectrics,antiferroelectrics and ferroelasticity
, Oxide thin films
, Semiconductor integrated circuit
Reference (16)：
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1) K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka and T. Kikkawa: IEEE IEDM Tech. Dig. (1991) p. 823.
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2) E. Fujii, Y. Uemoto, S. Hayashi, T. Nasu, Y. Shimada, A. Matsuda, M. Kibe, M. Azuma, T. Otsuki, G. Kano, M. Scott, L. McMillan and C. Paz de Araujo: IEEE IEDM Tech. Dig. (1992) p. 267.
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3) P. Lesaicherre, S. Yamamichi, H. Yamaguchi, K. Takemura, H. Watanabe, K. Tokashiki, K. Satoh, T. Sakuma, M. Yoshida, S. Ohnishi, K. Nakajima, K. Shibahara, Y. Miyasaka and H. Ono: IEEE IEDM Tech. Dig. (1994) p. 831.
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4) A. Yuuki, M. Yamamuka, T. Makita, T. Horikawa, T. Shibano, N. Hirano, H. Maeda, N. Mikami, K. Ono, H. Ogata and H. Abe: IEEE IEDM Tech. Dig. (1995) p. 115.
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5) S. Yamamichi, P. Lesaicherre, H. Yamaguchi, K. Takemura, S. Sone, H. Yabuta, K. Satoh, T. Tamura, K. Nakajima, S. Ohnishi, K. Tokashiki, Y. Hatashi, Y. Kato, Y. Miyasaka, M. Yoshida and H. Ono: IEEE IEDM Tech. Dig. (1995) p. 119.
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